This project aims to develop fully printed, self-rectifying memristors, free of noble and critical raw materials. To achieve the necessary control over the chemical and electronic properties at the Schottky interface, a “close to in situ” approach for X-ray photoelectron spectroscopy of solution processed thin films will be applied. This is a novelty in terms of device engineering methodology for solution processed electronics. The proposed device structure will be entirely printable. Resistive switching device fabrication will be optimized, and their electrical performance assessed.
The work will be developed at the Materials Research Center (CENIMAT|i3N) of the Nova School of Science and Technology (FCT NOVA), under the scientific guidance of Dr. Jonas Deuermeier and Dr. Emanuel Carlos.
The fellowship will last for 6 months, starting in January 16 of 2023
Application deadline and form of application submission:
The call is open from December 19th, 2022 to December 30th, 2022
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