Between January 2005 and March 2009, Prof. Wang worked at CENIMAT|i3N, focusing his research on the growth and characterization of p-type ZnO films deposited by RF magnetron sputtering. Supported by the Portuguese Foundation for Science and Technology (FCT) through two consecutive post-doctoral fellowships, his work on nitrogen doping and Al/Ga co-doping led to the publication of over 10 academic papers. During his time in Portugal, he also fostered vital international ties, spearheading a successful Luso-French collaborative project (“CPU - Actions universitaires intégrées LUSO-Françaises”) with CNRS-Meudon, alongside collaborations with the University of Aveiro and the Instituto Tecnológico e Nuclear (ITN).
Following his time at CENIMAT, Prof. Wang’s academic career has flourished. In 2009, he joined the prestigious Harbin Institute of Technology (HIT) in China as an overseas talent, subsequently receiving the "New Century Outstanding Talent" title from the Chinese Ministry of Education in 2010.
Today, he is a Professor at HIT’s School of Materials Science and Engineering, leading cutting-edge research in optoelectronic information materials and devices. His research group handles major national initiatives, including the National Key R&D Program, with a budget exceeding ¥24 million (over 3 million euros), and has published more than 200 SCI papers in fields such as wide-band-gap semiconductors, two-dimensional bismuthide, topological insulator films, photodetectors, and solar cells.
During his visit, Prof. Wang noted how much the institute has grown and transformed since his time here. i3N is incredibly proud of Prof. Wang’s remarkable international trajectory and wishes him continued success in his research endeavors.